Semiconductor device including air gap between semiconductor...

Details Semiconductor device including air gap between semiconductor... Semiconductor device including air gap between semiconductor...

2006-08-15

2006-08-15

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21626, C257SE29266, C257S900000

Reexamination Certificate

active

07091567

ABSTRACT:
A semiconductor device includes source/drain regions, a gate pattern disposed on the semiconductor substrate between the source/drain regions, and L-shaped spacers that are used as masks in the forming of the source/drain regions. The L-shaped spacers each include a vertical portion covering a side wall of the gate pattern, and a lateral portion extending from the bottom of the vertical portion over the source/drain region. Support portions interposed between the L-shaped spacers and the gate pattern support the lateral portions of the L-shaped spacers such that an air gap is defined between at least the lateral portions of the L-shaped spacers and the source/drain regions. The air gap minimizes the parasitic capacitance associated with the gate electrode of the semiconductor device.

REFERENCES:
patent: 6087234 (2000-07-01), Wu
patent: 6359321 (2002-03-01), Shimizu et al.
patent: 6924180 (2005-08-01), Quek
patent: 2002/0045318 (2002-04-01), Chen et al.
patent: 2003/0045061 (2003-03-01), Kwon et al.
patent: 2004/0063289 (2004-04-01), Ohta
patent: 2004/0155269 (2004-08-01), Yelehanka et al.
patent: 2004/0157457 (2004-08-01), Xu et al.
patent: 2005/0116360 (2005-06-01), Huang et al.

Affiliated with

Also associated with

Rating

Semiconductor device including air gap between semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including air gap between semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including air gap between semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3652903