Semiconductor device including a transparent semiconductor...

Details Semiconductor device including a transparent semiconductor... Semiconductor device including a transparent semiconductor...

2011-08-30

2011-08-30

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Plural recrystallized semiconductor layers

C257S076000, C257S077000, C257S080000, C257S338000, C257SE21209, C257SE21614, C257SE23085, C257SE25006, C257SE25013, C257SE25017, C257SE25027, C257SE27026, C257SE27027, C257SE27028, C257SE27029, C257SE29068, C438S152000

Reexamination Certificate

active

08008667

ABSTRACT:
A semiconductor device includes a first semiconductor layer and a first semiconductor element located in the first semiconductor layer. The semiconductor device also includes a second semiconductor layer of a transparent semiconductor material. The second semiconductor layer is disposed on the first semiconductor layer covering the first semiconductor element. The semiconductor device also includes a second semiconductor element located in the second semiconductor layer. The semiconductor device also includes a wire extending within the second semiconductor layer and electrically connecting the first and second semiconductor elements.

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English Abstract of JP 02253622A.

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