Semiconductor device including a TCAM having a storage...

Details Semiconductor device including a TCAM having a storage... Semiconductor device including a TCAM having a storage...

2007-06-26

2007-06-26

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S239000

Reexamination Certificate

active

11274299

ABSTRACT:
In order to improve the discharging speed of potential from a match line, a semiconductor device includes a capacitor, a memory transistor having a source/drain region connected to a storage node of the capacitor, a search transistor having a gate electrode connected to the storage node, and a stacked contact connecting a match line and the source/drain region of the search transistor. The storage node has a configuration in which a sidewall of the storage node facing the match line partially recedes away from the stacked contact such that a portion of the sidewall in front of the stacked contact in plan view along the direction of the match line is located farther away from the stacked contact than the remaining portion of the sidewall.

REFERENCES:
patent: 5005072 (1991-04-01), Gonzalez
patent: 5939746 (1999-08-01), Koyama et al.
patent: 6262907 (2001-07-01), Lien et al.
patent: 6320777 (2001-11-01), Lines et al.
patent: 6529397 (2003-03-01), Takeda et al.
Atsushi Amo, et al, “Semiconductor Device and Manufacturing Method Thereof” U.S. Appl. No. 10/455,371, filed Jun. 6, 2003, pp. 1-46, Format Art pp. 1-14, Ref. #G715US.

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