Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-28
2006-02-28
Lu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S239000
Reexamination Certificate
active
07005694
ABSTRACT:
In order to improve the discharging speed of potential from a match line, a semiconductor device includes a capacitor, a memory transistor having a source/drain region connected to a storage node of the capacitor, a search transistor having a gate electrode connected to the storage node, and a stacked contact connecting a match line and the source/drain region of the search transistor. The storage node has a configuration in which a sidewall of the storage node facing the match line partially recedes away from the stacked contact such that a portion of the sidewall in front of the stacked contact in plan view along the direction of the match line is located farther away from the stacked contact than the remaining portion of the sidewall.
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Atsushi Amo, et al. “Semiconductor Device and Manufacturing Method Thereof” U.S. Appl. No. 10/455,371, filed Jun. 6, 2003, pp. 1-46, Format Art pp. 1-14, Ref. # G715US.
Amo Atsushi
Kubo Shunji
Lu David
Renesas Technology Corp.
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