Semiconductor device including a stress buffer

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond

Reexamination Certificate

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Details

C257SE23023, C257SE23039, C257SE23069, C257SE23031, C257SE23034, C257S676000, C257S690000, C257S696000, C257S698000, C257S691000

Reexamination Certificate

active

07612457

ABSTRACT:
An integrated circuit includes a first surface configured for mounting to a carrier, an active area of the integrated circuit spaced from the first surface, a bond pad disposed over and in electrical communication with the active area, and a ceramic inorganic stress-buffering layer disposed between the active area and the bond pad.

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