Semiconductor device including a SRAM section and a logic...

Details Semiconductor device including a SRAM section and a logic... Semiconductor device including a SRAM section and a logic...

2007-06-12

2009-10-06

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S903000, C257SE27098

Reexamination Certificate

active

07598574

ABSTRACT:
A semiconductor device including a SRAM section and a logic circuit section includes: a first n-type MIS transistor including a first n-type gate electrode formed with a first gate insulating film interposed on a first element formation region of a semiconductor substrate in the SRAM section; and a second n-type MIS transistor including a second n-type gate electrode formed with a second gate insulating film interposed on a second element formation region of the semiconductor substrate in the logic circuit section. A first impurity concentration of a first n-type impurity in the first n-type gate electrode is lower than a second impurity concentration of a second n-type impurity in the second n-type gate electrode.

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patent: 2007/0221960 (2007-09-01), Ashida

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