Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With electric field controlling semiconductor layer having a...
Reexamination Certificate
2011-08-02
2011-08-02
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
With electric field controlling semiconductor layer having a...
C257S492000, C257SE27096, C438S588000
Reexamination Certificate
active
07989910
ABSTRACT:
A semiconductor device includes an n+ type semiconductor substrate1and a super junction region that has, on the top of the substrate1, an n and p type pillar regions2and3provided alternately. The device also includes, in the top surface of the super junction region, a p type base region4and an n type source layer5. The device also includes a gate electrode7on the region4and layer5via a gate-insulating film6, a drain electrode9on the bottom of the substrate1, and a source electrode8on the top of the substrate1. In the top surface of the super junction region in the terminal region, a RESURF region10is formed. The RESURF region has a comb-like planar shape with repeatedly-formed teeth having tips facing the end portion of the terminal region.
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Udrea et al., “Ultra-high voltage device termination using the 3D RESURF (super-junction) concept—experimental demonstration at 6.5kV”. Power Semiconductor Devices and ICs, 2001. ISPSD '01. Proceedings of the 13th International Symposium on. Publication Year: 2001 , pp. 129-132.
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Hatano Nana
Izumisawa Masaru
Ohta Hiroshi
Ono Syotaro
Saito Wataru
Kabushiki Kaisha Toshiba
Kraig William F
Le Thao X
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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