Semiconductor device including a protective element having negat

Details Semiconductor device including a protective element having negat Semiconductor device including a protective element having negat

1995-10-13

1998-10-13

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257173, 257368, H01L 2362

Patent

active

058215867

ABSTRACT:
A semiconductor device has a vertical MOS FET and a trigger element connected between the drain and the gate of the MOS FET. The trigger element has a heavily doped n region, a lightly doped p region and a lightly doped n region. The trigger element has a breakdown voltage lower than the drain-to-source rated voltage of the MOS FET and exhibits a negative resistance characteristic. A surge voltage enterring the drain of the MOS FET raises the gate potential of the MOS FET by flowing through the trigger element to thereby trigger the source-drain path of the MOS FET. The negative resistance characteristic of the trigger element enables to lower the temperature rise of the MOS FET to thereby protect the MOS FET against thermal destruction. A bidirectional diode set may be connected in series to the trigger element to design various breakdown voltage of the protective path.

REFERENCES:
patent: 5486709 (1996-01-01), Hayashi et al.

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