Semiconductor device including a protection circuit

Details Semiconductor device including a protection circuit Semiconductor device including a protection circuit

2007-04-17

2007-04-17

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S360000, C257S173000

Reexamination Certificate

active

10805040

ABSTRACT:
A semiconductor device includes a protection circuit protecting a semiconductor integrated circuit from electrostatic discharge, the protection circuit has a detection circuit detecting the electrostatic discharge, a trigger circuit generating a trigger signal based on the output signal of the detection circuit, and a thyristor having a PNP transistor and an NPN transistor, and operating by the trigger signal from the trigger circuit, the PNP transistor having an emitter connected to a first terminal of the semiconductor device, the NPN transistor having an emitter connected to a second terminal of the semiconductor device and a collector connected to base of the PNP transistor. The protection circuit further has a switching element controlling the connected between the PNP and NPN transistors in accordance with the output signal of the detection circuit.

REFERENCES:
patent: 5072273 (1991-12-01), Avery
patent: 2005/0098830 (2005-05-01), Honjoh et al.
Russ, et al., “GGSCRs:GGNMOS Triggered Silicon Controlled Rectifiers for ESD Protection In Deep Sub-Micron CMOS Process,” Electrical Overstress/Electostatic Discharge Symposium Proceedings, 2001 by ESD Association and Sarnoff Corporation, pp. 01-22.

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