Semiconductor device including a predetermined film formed...

Details Semiconductor device including a predetermined film formed... Semiconductor device including a predetermined film formed...

2005-08-23

2005-08-23

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S317000, C257S510000, C257S520000

Reexamination Certificate

active

06933576

ABSTRACT:
A semiconductor device includes a silicon oxide film (2) formed in a predetermined region on a single crystalline silicon substrate (1) and a gate dielectric film (3) as a thermal oxide film formed by performing thermal oxidation on the surface of the substrate (1) in a region adjacent to the silicon oxide film (2). A polycrystalline silicon (5) (or amorphous silicon) having an oxidized surface is formed on the border between the silicon oxide film (2) and gate dielectric film (3).

REFERENCES:
patent: 4477310 (1984-10-01), Park et al.
patent: 4612629 (1986-09-01), Harari
patent: 4666556 (1987-05-01), Fulton et al.
patent: 5393692 (1995-02-01), Wu
patent: 5798550 (1998-08-01), Kuroyanagi et al.
patent: 2002/0084484 (2002-07-01), Kurihara et al.
patent: 101 57 538 (2003-06-01), None
patent: 1-138760 (1989-05-01), None
patent: 4-188772 (1992-07-01), None

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