Semiconductor device including a power device with first...

Details Semiconductor device including a power device with first... Semiconductor device including a power device with first...

2006-11-20

2010-12-14

Brewster, William M. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S766000, C257S781000

Reexamination Certificate

active

07851913

ABSTRACT:
A semiconductor device exhibits a first metal layer, made of a first metal, with at least one contiguous subsection. At least one second metal layer, made of a second metal, is placed on the contiguous subsection of the first metal layer. The second metal is harder than the first metal. The second metal layer is structured to form at least two layer regions, which are disposed on the contiguous subsection of the first metal layer. The second metal exhibits a boron-containing or phosphorus-containing metal or a boron-containing or phosphorus-containing metal alloy.

REFERENCES:
patent: 4077854 (1978-03-01), Estep et al.
patent: 5739587 (1998-04-01), Sato
patent: 5929521 (1999-07-01), Wark et al.
patent: 6864578 (2005-03-01), Angell et al.
patent: 2002/0056901 (2002-05-01), Ono et al.
patent: 2003/0151141 (2003-08-01), Matsuki et al.
patent: 2004/0135223 (2004-07-01), Allman et al.
patent: 2005/0067709 (2005-03-01), Bachman et al.
patent: 2005/0073058 (2005-04-01), Kuo et al.
patent: 2006/0091536 (2006-05-01), Huang et al.
patent: 2006/0145342 (2006-07-01), Maynollo et al.
patent: 2006/0163742 (2006-07-01), Stecher
patent: 2007/0090496 (2007-04-01), Otremba
patent: 699 12 565 (2004-09-01), None
patent: 103 58 325 (2005-07-01), None
patent: 10 2004 057 485 (2006-06-01), None
patent: 10 2004 061 307 (2006-06-01), None
patent: 1006576 (2003-11-01), None

Affiliated with

Also associated with

Rating

Semiconductor device including a power device with first... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including a power device with first..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including a power device with first... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4201485