Semiconductor device including a MISFET and a MIS capacitor

Details Semiconductor device including a MISFET and a MIS capacitor Semiconductor device including a MISFET and a MIS capacitor

2007-08-21

2007-08-21

Pizarro, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S601000, C257SE29344

Reexamination Certificate

active

10896899

ABSTRACT:
A semiconductor device comprises varactor regions Va and transistor regions Tr. An active region for a varactor is formed with a substrate contact impurity diffusion region obtained by doping an N well region with N-type impurity at a relatively high concentration. However, any extension region (or LDD region) as in a varactor of a known semiconductor device is not formed in the active region for a varactor. On the other hand, parts of a P well region located to both sides of the polysilicon gate electrode in the transistor region Tr are formed with high-concentration source/drain regions and extension regions. Therefore, the extendable range of a depletion layer is kept wide to extend the capacitance variable range of the varactor.

REFERENCES:
patent: 6034388 (2000-03-01), Brown et al.
patent: 6194279 (2001-02-01), Chen et al.
patent: 6653716 (2003-11-01), Vashchenko et al.
patent: 6703297 (2004-03-01), Hellig
patent: 6858918 (2005-02-01), Maeda et al.
patent: 2003/0052389 (2003-03-01), Maeda et al.
patent: 9-121025 (1997-05-01), None

Affiliated with

Also associated with

Rating

Semiconductor device including a MISFET and a MIS capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including a MISFET and a MIS capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including a MISFET and a MIS capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3889091