Semiconductor device including a MIM capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S306000, C257SE27086

Reexamination Certificate

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07348623

ABSTRACT:
A semiconductor device includes: a semiconductor substrate; a first wiring formed above the semiconductor substrate with a first insulating film interposed therebetween; an MIM capacitor formed above the first insulating film; a second insulating film formed to cover the MIM capacitor; a second wiring formed on the second insulating film; and a guard ring buried in the second insulating film to surround the MIM capacitor.

REFERENCES:
patent: 6727542 (2004-04-01), Kim et al.
patent: 6784474 (2004-08-01), Ogawa et al.
patent: 6809364 (2004-10-01), Matsuoka et al.
patent: 6906374 (2005-06-01), Tanaka
patent: 2002/0127792 (2002-09-01), Yoshitomi et al.
patent: 2003/0057558 (2003-03-01), Akiyama
patent: 2004/0092095 (2004-05-01), Nguyen et al.
patent: 2002-134506 (2002-05-01), None
patent: 2002-270769 (2002-09-01), None
patent: 2002-367996 (2002-12-01), None
patent: 2003-17575 (2003-01-01), None
patent: 2003-086695 (2003-03-01), None
Japanese Office Action entitled, “Notification of Reasons for Rejection,” mailed by the Japanese Patent Office on Jun. 6, 2006 in counterpart Japanese Application No. 2003-194419.

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