Semiconductor device including a memory unit and a logic unit

Details Semiconductor device including a memory unit and a logic unit Semiconductor device including a memory unit and a logic unit

2007-04-24

2007-04-24

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257SE27048

Reexamination Certificate

active

11497236

ABSTRACT:
In a semiconductor device including a memory unit and a logic unit, a generation of a step in a terminal end surface of an electroconductive plug in a region above a capacitor element is inhibited. Such semiconductor device includes an insulating layer provided on the semiconductor substrate extending from the memory unit to the logic unit; a plurality of second interconnect connecting plugs embedded in the interlayer insulating film and the interlayer insulating film in the logic unit; capacitor elements embedded in the interlayer insulating film in memory unit; and dummy plugs, embedded in the interlayer insulating film and the interlayer insulating film in a region above a region that is provided with the capacitor element in the memory unit, and insulated from the capacitor element. A plurality of second interconnect connecting plugs and the dummy plug are terminated in the top surface of the interlayer insulating film.

REFERENCES:
patent: 4811076 (1989-03-01), Tigelaar et al.
patent: 6104052 (2000-08-01), Ozaki et al.
patent: 6690050 (2004-02-01), Taniguchi et al.
patent: 2004/0089913 (2004-05-01), Yano et al.
patent: 2005/0056876 (2005-03-01), Miyatake et al.
patent: 2005/0087817 (2005-04-01), Zhang
patent: 2003-031690 (2003-01-01), None

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