Semiconductor device including a lateral power device

Details Semiconductor device including a lateral power device Semiconductor device including a lateral power device

1997-10-20

1999-02-23

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

257491, 257500, H01L 2358, H01L 2900

Patent

active

058747672

ABSTRACT:
A high breakdown voltage pch-MOSFET having a breakdown voltage of 150 V or more and a control element controlling the same are formed in a common n.sup.- epitaxial layer. Only an n-type region of n.sup.- epitaxial layer is distributed at a region located between the high breakdown voltage pch-MOSFET and the control element and extending along the substrate surface. A semiconductor device thus formed achieves a good throughput and reduces a required chip area.

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Goodenough, "Electronic Design", vol. 33, No. 21 pp. 113-122, Sep. 1985.
F. Goodenough, "Electronic Design," vol. 33, No. 21, Sep 1985, pp. 113-122.
R. Schuett, "Neue Leistungshalbleiter Schalten Schneller Bericht Von Der Etg-Fachtagung `Abschaltbare Elemente Der Leistungselektronik Und Ihre Anwendungen,`" Elektrotechnik, vol. 70, No. 10, Jun. 7, 1988, pp. 46-48.
S. Mukherjee, A High Current Power IC Technology Using Trench DMOS Power Device, Institute of Electrical and Electronics Engineers, Proceedings of the International Electron Devices Meeting, Washington, D.C., Dec. 8-11, 1991, pp. 91/145-148.
A.W.Ludikhuize, "A Versatile 250/300-V IC Process for Analog and Switching Applications"IEEE Transactions on Electron Devices, vol. ED-33 No. 12, Dec. 1996, pp. 2008-2015.

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