Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-21
2006-02-21
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S093000, C257S305000, C257S374000, C257S395000, C257S396000, C257S397000, C257S398000, C257S399000, C257S400000, C257S409000, C257S446000, C257S500000, C257S501000, C257S502000, C257S506000, C257S509000, C257S524000, C257S551000, C257S638000, C257S917000
Reexamination Certificate
active
07002210
ABSTRACT:
On a semiconductor substrate, a well is formed. In the well, one MOS transistor including a gate electrode, a source region, a source field limiting layer and a source/drain region, and another MOS transistor including a gate electrode, a drain electrode, a drain field limiting layer and a source/drain region are formed. The one and another MOS transistors are connected in series through the source/drain region common to the two transistors. Accordingly, a semiconductor device can be provided in which increase in pattern layout area is suppressed when elements including a high-breakdown voltage MOS transistor are to be connected in series.
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McDermott Will & Emery LLP
Renesas Technology Corp.
Soward Ida M.
Zarabian Amir
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