Semiconductor device including a halo layer and method of...

Details Semiconductor device including a halo layer and method of... Semiconductor device including a halo layer and method of...

2009-06-08

2011-12-13

Pham, Hoai V (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S382000, C257SE27060, C257SE27062

Reexamination Certificate

active

08076731

ABSTRACT:
A semiconductor device1according to one embodiment of the invention includes: a semiconductor substrate10; a convex region12provided on the semiconductor substrate10; a gate insulating film100provided on the convex region12; a channel region101located in the convex region12under the gate insulating film100; source/drain regions115provided on both sides of the convex region12and having extensions115aon both sides of the channel region101; and a halo layer110provided between the convex region12and the source/drain region115so as to contact with the convex region12.

REFERENCES:
patent: 6274894 (2001-08-01), Wieczorek et al.
patent: 6743684 (2004-06-01), Liu
patent: 2004/0166611 (2004-08-01), Liu
patent: 2006/0038243 (2006-02-01), Ueno et al.
patent: 2009/0215240 (2009-08-01), Kim et al.
patent: 2006-060188 (2006-03-01), None

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