Semiconductor device including a field effect transistor and a b

Details Semiconductor device including a field effect transistor and a b Semiconductor device including a field effect transistor and a b

1994-09-13

1995-11-28

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, H01L 2348, H01L 2944, H01L 2952, H01L 2978

Patent

active

054710839

ABSTRACT:
Disclosed is a semiconductor device including a bipolar transistor and a field effect transistor and allowing an increased operating speed, and a method of manufacturing such a semiconductor device. In the semiconductor device, a junction depth of an intrinsic base layer and a junction depth of an external base layer are made shallower than a junction depth of source/drain regions. Whereby a parasitic capacitance of the bipolar transistor portion is reduced, and at the same time, a driving current of the field effect transistor portion is increased to some extent. Consequently, an increased operating speed of the bipolar transistor portion and the field effect transistor portion is achieved.

REFERENCES:
patent: 5311078 (1994-05-01), Makino et al.
Muller et al, Device Elec for IC's . . . , 1986, pp. 456-457.

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