Semiconductor device including a field effect transistor

Details Semiconductor device including a field effect transistor Semiconductor device including a field effect transistor

1992-07-06

1995-01-03

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Containing germanium, ge

257347, 257607, H01L 2906, H01L 29784

Patent

active

053789237

ABSTRACT:
Holes generated by impact ionization in a SOI-MOS transistor is removed from the channel region to improve the breakdown voltage between the source and drain. A channel region of the SOI-MOS transistor is formed of a p type silicon layer. A drain region is formed of an n type silicon layer. A source region adjacent to the channel region includes an n type germanium layer. The forbidden energy band gap width of the germanium is smaller than that of the silicon. The n type germanium layer is formed in at least a portion of the source region. This layer is formed by ion-implanting germanium into a portion of the silicon layer, or removing a portion of the silicon layer, followed by growing a germanium layer in an epitaxial manner thereabove.

REFERENCES:
patent: 4809056 (1989-02-01), Shirato et al.
patent: 4982263 (1991-01-01), Spratt et al.
patent: 5134447 (1992-07-01), Ng et al.
Tihanyi, Jeno and Schlotterer, Heinrich, "Properties of ESFI MOS Transistors Due to the Floating Substrate and the Finite Volume", IEEE Transactions on Electron Devices, vol. ED-22, No. 11, pp. 1017-1023, Nov. 1975.

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