Semiconductor device including a deflected part

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S287000, C257S368000, C257S401000, C257SE21442

Reexamination Certificate

active

07989855

ABSTRACT:
This invention relates to a semiconductor device having a beam made of a semiconductor to which strain is introduced by deflection, and a current is permitted to flow in the beam.

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Masayoshi Esash ed., “Micromachine-a small and high-performance system in which various elements are integrated”. Industrial Technology Service Center, Feb. 18, 2002, pp. 221-231, Jiro Sakata “Section 3: Measures to Sticking”.
J. Foucher, et al., “Design of notched gate process in high density plasma,” Journal of Vacuum Science and Technology, p. 2024-2031, vol. B20, No. 5, Sep./Oct., 2002.

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