Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2011-04-26
2011-04-26
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257SE23044, C257SE23052, C257SE23079, C257SE25031, C257SE23085, C257S784000, C257S686000, C257S723000, C257S685000, C257S777000, C257S177000
Reexamination Certificate
active
07932588
ABSTRACT:
The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring.
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Ashida Kisho
Kawashima Tetsuya
Matsuura Nobuyoshi
Okawa Keiichi
Sato Yukihiro
Mattingly & Malur, P.C.
Renesas Electronics Corporation
Williams Alexander O
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