Semiconductor device including a capacitor element

Details Semiconductor device including a capacitor element Semiconductor device including a capacitor element

2005-10-25

2008-03-25

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S306000

Reexamination Certificate

active

07348624

ABSTRACT:
A semiconductor device having a capacitor including a first electrode, a second electrode and an insulator. The semiconductor device includes first layers and second layers laminated alternately. The first layers each includes lines of the first electrode and lines of the second electrode arranged alternately and extending in a first direction. The second layers each including lines of the first electrode and lines of the second electrode arranged alternately and extending in a second direction. First via holes connect the lines of the first electrode in each of the first layers and lines of the first electrode in each of the second layers. Second via holes connect the lines of the second electrode in each of the first layers and the lines of the second electrode in each of the second layers.

REFERENCES:
patent: 5583359 (1996-12-01), Ng et al.
patent: 6819542 (2004-11-01), Tsai et al.
patent: 2005/0208728 (2005-09-01), Benetik et al.
patent: 11-168182 (1999-06-01), None
patent: 2003-530699 (2003-10-01), None

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