Semiconductor device in which thin silicon portions are formed b

Details Semiconductor device in which thin silicon portions are formed b Semiconductor device in which thin silicon portions are formed b

1996-11-27

2000-02-01

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257619, 257622, 438 53, H01L 2982, H01L 2906

Patent

active

060206187

ABSTRACT:
A semiconductor device such as a semiconductor dynamic sensor which is produced at an improved chip yield is provided. Etching wiring having a main line and a branch line is formed on a chip region via an intervening insulating film. The chip region contains an N-type reduced thickness region and is surrounded by a P-type chip isolating layer. The etching wiring is formed with a gap (an etching wiring gap) from other etching wiring members or circuit wiring formed on the chip region via an intervening insulating film. The etching wiring gap is greater than any of the gaps between members of the circuit wiring.

REFERENCES:
patent: 4505799 (1985-03-01), Baxter
patent: 5172207 (1992-12-01), Nojiri
patent: 5420458 (1995-05-01), Shimoji
patent: 5591665 (1997-01-01), Bodensohn et al.
patent: 5614753 (1997-03-01), Uchikoshi et al.

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