Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-26
2005-04-26
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S531000, C257S368000, C257S371000, C438S199000, C438S223000
Reexamination Certificate
active
06885069
ABSTRACT:
A substrate contains dissolved oxygen at a concentration of not more than 8×1017atoms/cm3and an impurity which is used as an acceptor or donor at a concentration of not more than 1×1015atoms/cm3. In the substrate, an oxygen precipitation layer used to suppress occurrence of a slip starting from the rear surface of the substrate is formed. On the substrate, a silicon layer in which circuit elements are formed and which contains dissolved oxygen with at concentration of not more than 8×1017atoms/cm3and an impurity which is used as an acceptor or donor at a concentration of not more than 1×1015atoms/cm3is formed.
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Flynn Nathan J.
Forde Remmon R.
Frommer & Lawrence & Haug LLP
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