Semiconductor device having wiring self-aligned with shield stru

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438633, 438622, H01L 21461

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active

058800247

ABSTRACT:
A semiconductor integrated circuit device has circuit components, a wiring arrangement electrically connected to the circuit components and a shield structure for preventing signal wirings from a cross-talk between the signal wirings, and the signal wirings are patterned from a conductive layer extending over grooves formed in the shield structure so as to be self-aligned with the shield structure.

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patent: 5262353 (1993-11-01), Sun et al.
patent: 5328553 (1994-07-01), Poon
patent: 5510638 (1996-04-01), Lancaster et al.
"Closely Packed Microstrip Lines as Very High-Speed Chip-to-Chip Interconnects", Oh-Kyong Kwon et al, IEEE Transactions on Components, Hybrids. and Manufacturing Technology, vol. CHMT-10, No. 3, pp. 314 to 320, Sep. 1987.
"The Parylene-Aluminum Multilayer Interconnection System for Wafer Scale Integration and Wafer Scale Hybrid Package", Journal of Electronic Materials, vol. 18, No. 2, pp. 301 to 311, 1989.
"VLSI Multilevel Micro-Coaxial Interconnects for High Speed Devices" by IEDM 90.

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