Semiconductor device having via connecting between...

Details Semiconductor device having via connecting between... Semiconductor device having via connecting between...

2008-09-30

2009-12-15

Nguyen, Ha Tran (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

07632751

ABSTRACT:
A first insulating film is provided between a lower interconnect and an upper interconnect. The lower interconnect and the upper interconnect are connected to each other by way of a via formed in the first insulating film. A dummy via or an insulating slit is formed on/in the upper interconnect near the via.

REFERENCES:
patent: 6717267 (2004-04-01), Kunikiyo
patent: 6919637 (2005-07-01), He et al.
patent: 2002/0145201 (2002-10-01), Armbrust et al.
patent: 1304175 (2001-07-01), None
patent: 2000-012688 (2000-01-01), None
patent: 2000-331991 (2000-11-01), None
patent: 2002-033384 (2002-01-01), None
patent: 2002-299437 (2002-10-01), None
Chinese Office Action issued in Chinese Patent Application No. CN 200410096561.2, dated Jul. 13, 2007.

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