Semiconductor device having vertical pillar transistors and...

Details Semiconductor device having vertical pillar transistors and... Semiconductor device having vertical pillar transistors and...

2011-08-16

2011-08-16

Fahmy, Wael M (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S333000, C257SE21336, C257SE21345, C438S294000, C438S587000

Reexamination Certificate

active

07999313

ABSTRACT:
A semiconductor device includes vertical pillar transistors formed in respective silicon pillars of a silicon substrate. The gates of the vertical pillar transistor are selectively formed on a single surface of lower portions of the silicon pillars, and drain areas of the vertical pillar transistors are connected with one another.

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