Semiconductor device having vertical metal oxide semiconductors

Details Semiconductor device having vertical metal oxide semiconductors Semiconductor device having vertical metal oxide semiconductors

1995-05-22

1996-11-05

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 52, 437919, 437974, H01L 21265, H01L 2170, H01L 2700

Patent

active

055717306

ABSTRACT:
A vertically structured transistor and method for manufacturing the same achieves a highly integrated semiconductor device. A pillar is vertically formed on a semiconductor substrate and forms a channel region of the transistor. A gate electrode is formed in a self-alignment fashion so as to surround the sides of the pillar with a gate insulating film imposed therebetween. A source region and a drain region are formed in a lower portion and an upper portion of the pillar, respectively. The area occupied by a transistor according to the present invention is remarkably reduced.

REFERENCES:
patent: 5057896 (1991-10-01), Gotou
patent: 5106775 (1992-04-01), Kaga et al.
patent: 5281837 (1994-01-01), Kohyama
patent: 5498889 (1996-03-01), Hayden

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