Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound
Reexamination Certificate
2011-08-30
2011-08-30
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Group iii-v compound
C257SE29100, C438S019000
Reexamination Certificate
active
08008749
ABSTRACT:
A semiconductor device is provided with a drain electrode22, a semiconductor base plate32, an electric current regulation layer42covering a part of a surface of the semiconductor base plate32and leaving a non-covered surface55at the surface of the semiconductor base plate32, a semiconductor layer50covering a surface of the electric current regulation layer42, and a source electrode62formed at a surface of the semiconductor layer50. A drift region56, a channel forming region54, and a source region52are formed within the semiconductor layer50. The drain electrode22is connected to a first terminal of a power source, and the source electrode62is connected to a second terminal of the power source. With this semiconductor layer50, it is possible to increase withstand voltage or reduce the occurrence of current leakage.
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Kachi Tetsu
Soejima Narumasa
Sugimoto Masahiro
Ueda Hiroyuki
Uesugi Tsutomu
Finnegan Henderson Farabow Garrett & Dunner LLP
Gordon Matthew
Le Thao X
Toyota Jidosha & Kabushiki Kaisha
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