Semiconductor device having variable thickness insulating...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S347000, C257S296000, C257S303000

Reexamination Certificate

active

07659578

ABSTRACT:
Embodiments of a semiconductor device capable of increasing an aperture ratio of an organic electroluminescence display device by decreasing the surface area of a capacitor in the organic electroluminescence display device and a method of manufacturing the semiconductor device are disclosed. By forming a gate insulating film of a gate electrode with a thickness different from that of a dielectric film of a capacitor, the surface area of the capacitor can be decreased without variation in capacitance, thereby increasing the aperture ratio of an organic electroluminescence display device.

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