Semiconductor device having variable parameter selection...

Details Semiconductor device having variable parameter selection... Semiconductor device having variable parameter selection...

2009-02-24

2009-12-29

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S222000, C365S211000, C365S226000, C365S227000, C365S228000, C365S229000, C702S130000, C702S132000

Reexamination Certificate

active

07639548

ABSTRACT:
A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, a word line low voltage, or the like. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.

REFERENCES:
patent: 6442500 (2002-08-01), Kim
patent: 7107178 (2006-09-01), Won et al.
patent: 7177218 (2007-02-01), Choi et al.
patent: 7480588 (2009-01-01), Walker
patent: 2005/0276144 (2005-12-01), Min et al.

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