Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2006-09-15
2010-06-22
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257SE21634, C438S306000
Reexamination Certificate
active
07741699
ABSTRACT:
A semiconductor device includes a gate stack over a semiconductor substrate, a lightly doped n-type source/drain (LDD) region in the semiconductor substrate and adjacent the gate stack wherein the LDD region comprises an n-type impurity, a heavily doped n-type source/drain (N+ S/D) region in the semiconductor substrate and adjacent the gate stack wherein the N+ S/D region comprises an n-type impurity, a pre-amorphized implantation (PAI) region in the semiconductor substrate wherein the PAI region comprises an end of range (EOR) region, and an interstitial blocker region in the semiconductor substrate wherein the interstitial blocker region has a depth greater than a depth of the LDD region but less than a depth of the EOR region.
REFERENCES:
patent: 4755865 (1988-07-01), Wilson et al.
patent: 5108935 (1992-04-01), Rodder
patent: 5262664 (1993-11-01), Jung-Suk
patent: 5576226 (1996-11-01), Hwang
patent: 5585286 (1996-12-01), Aronowitz et al.
patent: 5719425 (1998-02-01), Akram et al.
patent: 5885861 (1999-03-01), Gardner et al.
patent: 5933721 (1999-08-01), Hause et al.
patent: 5959333 (1999-09-01), Gardner et al.
patent: 6225151 (2001-05-01), Gardner et al.
patent: 6268640 (2001-07-01), Park et al.
patent: 6271095 (2001-08-01), Yu
patent: 6458641 (2002-10-01), Tsukamoto
patent: 6475885 (2002-11-01), Sultan
patent: 6521502 (2003-02-01), Yu
patent: 6555439 (2003-04-01), Xiang et al.
patent: 6680250 (2004-01-01), Paton et al.
patent: 6830980 (2004-12-01), Mansoori et al.
patent: 7064399 (2006-06-01), Babcock et al.
patent: 7498642 (2009-03-01), Chen et al.
patent: 2004/0031970 (2004-02-01), Chakravarthi et al.
patent: 2004/0087120 (2004-05-01), Feudel et al.
patent: 2004/0102013 (2004-05-01), Hwang et al.
patent: 2004/0173855 (2004-09-01), Masuoka et al.
patent: 2005/0085055 (2005-04-01), Tan et al.
patent: 2005/0110082 (2005-05-01), Cheng et al.
patent: 2006/0006427 (2006-01-01), Tan et al.
patent: 2006/0051922 (2006-03-01), Huang et al.
patent: 2006/0216900 (2006-09-01), Wang et al.
patent: 2006/0234455 (2006-10-01), Chen et al.
Chang Hsun
Chen Chien-Hao
Chen Shih-Chang
Huang Li-Ping
Ku Keh-Chiang
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Vu David
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