Semiconductor device having triple LDD structure and lower...

Details Semiconductor device having triple LDD structure and lower... Semiconductor device having triple LDD structure and lower...

2006-08-01

2006-08-01

Kebede, Brook (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S408000, C257SE29278

Reexamination Certificate

active

07084458

ABSTRACT:
A method of fabricating a semiconductor device having a triple LDD (lateral diffused dopants) structure is disclosed. This fabrication method requires a single implant process, leading to reduction in fabrication costs and fabrication time. Moreover, this fabrication method increases the surface area of the gate structure of the semiconductor device that is available for silicide to be formed, leading to lower gate resistance.

REFERENCES:
patent: 6096616 (2000-08-01), Nistler et al.
patent: 6107129 (2000-08-01), Gardner et al.
of Wolf et al. , Silicon For the VLSI Era, vol. 1: Process Technology, pp. 397-398, 1985.

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