Semiconductor device having trench isolation for...

Details Semiconductor device having trench isolation for... Semiconductor device having trench isolation for...

2007-10-30

2007-10-30

Crane, Sara (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257S347000

Reexamination Certificate

active

10977226

ABSTRACT:
A semiconductor device has trenches for defining active regions. After a thin diffusion barrier is deposited in the trenches, some of the trenches are selectively etched to leave different areas in the trench. One of the areas has the diffusion barrier completely removed so that the underlying layer is exposed. Another area has the diffusion barrier remaining. An oxidation step follows so that oxidation occurs at a corner where the diffusion barrier was removed whereas the oxidation is blocked by the diffusion barrier, which functions as a barrier to oxygen. The corners for oxidation are those in which compressive stress is desirable, such as along a portion of the border of a P channel transistor. The corners where the diffusion barrier is left are those in which a compressive stress is undesirable such as the border of an N channel transistor.

REFERENCES:
patent: 6524929 (2003-02-01), Xiang
patent: 6803270 (2004-10-01), Dokumachi et al.
patent: 6887798 (2005-05-01), Deshpande et al.
patent: 6955955 (2005-10-01), Chen et al.

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