Semiconductor device having trench isolation

Details Semiconductor device having trench isolation Semiconductor device having trench isolation

2005-01-18

2005-01-18

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000

Reexamination Certificate

active

06844240

ABSTRACT:
A structure having trench isolation which protects a nitride liner in the trench during subsequent plasma processing. The structure includes a trench formed in a semiconductor substrate, the trench having sidewalls and a bottom. A thermal oxide layer is formed on the bottom and sidewalls of the trench so as to remove substrate damage caused during etching of the semiconductor substrate to form the trench. A material layer is formed on the thermal oxide layer so as to prevent the bottom and sidewalls of the trench from being oxidized. Then, a protection layer is formed on the oxidation barrier layer. The trench is filled with a trench fill material uniformly with respect to the bottom and sidewalls of the trench.

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Wolf et al.; “Silicon Processing for VLSI Era (vol. 1)”; pp. 183-185, 1986.

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