Semiconductor device having trench gate structure

Details Semiconductor device having trench gate structure Semiconductor device having trench gate structure

2011-06-07

2011-06-07

Blum, David S (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27060

Reexamination Certificate

active

07956409

ABSTRACT:
The present invention provides a vertical MOSFET which has striped trench gate structure which can secure avalanche resistance without increasing Ron. A vertical MOSFET100comprises a plurality of gate trenches7which is arranged in stripes, an array which is sandwiched with the plurality of gate trenches7and includes N+source regions4N+ and P+base contact regions5P+, and a diode region (anode region6P+) which is formed so as to contact with two gate trenches7. The N+source regions4N+ and the base contact regions5P+ are alternately arranged along a longitudinal direction of the gate trench7. Size of the diode region (anode region6P+) corresponds to at least one of the N+source regions4N+ and two of the P+base contact regions5P+.

REFERENCES:
patent: 5998837 (1999-12-01), Williams
patent: 6351009 (2002-02-01), Kocon et al.
patent: 2002/0019099 (2002-02-01), Williams et al.

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