Semiconductor device having trench edge termination structure

Details Semiconductor device having trench edge termination structure Semiconductor device having trench edge termination structure

2011-05-24

2011-05-24

Nguyen, Ha Tran T (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29051

Reexamination Certificate

active

07948033

ABSTRACT:
In one embodiment, a device is formed in a region of semiconductor material. The device includes active cell trenches and termination trenches each having doped sidewall surfaces that compensate the region of semiconductor material during reverse bias conditions to form a superjunction structure. The termination trenches include a trench fill material that enhances depletion region spread during reverse bias conditions.

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