Semiconductor device having trench charge compensation...

Details Semiconductor device having trench charge compensation... Semiconductor device having trench charge compensation...

2006-05-30

2008-08-12

Toledo, Fernando L (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

C257S493000, C438S268000, C438S274000

Reexamination Certificate

active

07411266

ABSTRACT:
In one embodiment, a semiconductor device is formed having charge compensation trenches in proximity to channel regions of the device. The charge compensation trenches comprise at least two opposite conductivity type semiconductor layers. A channel connecting region electrically couples the channel region to one of the at least two opposite conductivity type semiconductor layers.

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“A Novel Trench Concept for the Fabrication of Compensation Devices,” M. Rub, D. Ahlers, J. Baumgartl, G. Deboy, W. Friza, O. Haberlen andl, Steinigke, pp. 203-206., ISPSD 2003, Apr. 14th-17, Cambridge, UK.

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