Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-01-09
1996-07-30
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257348, 257350, H01L 2701, H01L 2712, H01L 310392
Patent
active
055414311
ABSTRACT:
A semiconductor device has a plurality of transistor pairs. Each transistor pair includes a p-channel current path having a pair of p-type current terminal regions arranged by sandwiching a high resistivity of a first channel region, an n-channel current path having a pair of n-type current terminal regions arranged by sandwiching a high resistivity of a second channel region. The first channel region and the second channel region exert each electric field on each other by their intrinsic charges and are adjacently arranged so as to serve as a gate.
REFERENCES:
patent: 5095347 (1992-03-01), Kirsch
Fujitsu Limited
Meier Stephen D.
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