Semiconductor device having transistor pair

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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Details

257348, 257350, H01L 2701, H01L 2712, H01L 310392

Patent

active

055414311

ABSTRACT:
A semiconductor device has a plurality of transistor pairs. Each transistor pair includes a p-channel current path having a pair of p-type current terminal regions arranged by sandwiching a high resistivity of a first channel region, an n-channel current path having a pair of n-type current terminal regions arranged by sandwiching a high resistivity of a second channel region. The first channel region and the second channel region exert each electric field on each other by their intrinsic charges and are adjacently arranged so as to serve as a gate.

REFERENCES:
patent: 5095347 (1992-03-01), Kirsch

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