Semiconductor device having three-dimensional construction...

Details Semiconductor device having three-dimensional construction... Semiconductor device having three-dimensional construction...

2006-09-12

2009-06-02

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S458000, C257SE21568

Reexamination Certificate

active

07541257

ABSTRACT:
A semiconductor device includes: a silicon substrate; and a silicon oxide film disposed on the silicon substrate. The silicon oxide film includes a part, which separates from a surface of the silicon substrate, so that the silicon oxide film provides a three-dimensional construction. By using the three-dimensional construction, an additional function such as a resistor or a capacitor is easily added in the device. Further, a manufacturing method of this three-dimensional construction is simple and has a low cost.

REFERENCES:
patent: 4784975 (1988-11-01), Hofmann et al.
patent: 4851370 (1989-07-01), Doklan et al.
patent: 6225190 (2001-05-01), Bruel et al.
patent: 6429094 (2002-08-01), Maleville et al.
patent: 6551946 (2003-04-01), Chen et al.
patent: 6620681 (2003-09-01), Kim et al.
patent: 6689696 (2004-02-01), Lee et al.
patent: 6723662 (2004-04-01), Lee et al.
patent: 2001/0008291 (2001-07-01), Aoki et al.
patent: 2002/0167046 (2002-11-01), Aoki et al.
patent: 2005/0090060 (2005-04-01), Aoki et al.
patent: 2005/0159008 (2005-07-01), Chang et al.
patent: A-07-122710 (1995-05-01), None
patent: A-2001-053250 (2001-02-01), None
Office Action dated Aug. 31, 2007 in corresponding German Patent Application No. 10 2006 043 360.2-33 (and English translation).

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