Semiconductor device having thermal stress resistance structure

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents

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Details

257713, 257717, 351688, 351704, 351707, 351711, H01L 2334, H05K 720

Patent

active

056212437

ABSTRACT:
A high reliability electric power control semiconductor device with a prolonged product lifetime has been provided by successfully suppressing the metal support plate or the metal heat dissipation plate from warping due to the thermal stress during bonding so as to prevent the occurrences of cracks and gaps in the brazing fillers in the bonded layers between the metal heat dissipation plate or the metal support plate and the insulation plate in the semiconductor device comprising the semiconductor elements, metal heat dissipation plate, thermal stress buffer, insulation plate, and the metal support plate, wherein at least one of the metal heat dissipation plate and the metal support plate comprises a copper alloy of which a softening temperature at which a hot hardness of which becomes 1/2 of the hardness at the room temperature is 350.degree. C. or more. Further, in the semiconductor device fabricated by bonding the semiconductor elements via the thermal stress buffer, the heat dissipation plate and the insulation plate onto the metal support plate, the heat dissipation plate comprises a portion having a reduced thickness in the periphery thereof machined by counterboring or the like.

REFERENCES:
patent: 4558510 (1985-12-01), Tani et al.
patent: 5367196 (1994-11-01), Mahulikar et al.

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