Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-06-25
2000-01-04
Dutton, Brian
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438640, 438623, 438673, 438701, H01L 21283
Patent
active
060109572
ABSTRACT:
A semiconductor device and fabrication process in which tapered conductive lines are formed. Consistent with one embodiment of the invention, a semiconductor device is formed by forming at least one conductive structure over a substrate and forming an insulating layer over the conductive structure. The insulating layer is provided with one or more tapered grooves separated from the conductive structure by a portion of the insulating layer. In each tapered groove a conductive line is formed. The conductive lines may, for example, be metal lines. The conductive structures may, for example, be active regions of a transistor or a previously formed conductive line. A portion of the insulating layer between the conductive layers may be a low dielectric material.
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Gardner Mark I.
Kadosh Daniel
Advanced Micro Devices
Dutton Brian
Guerrero Maria
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