Semiconductor device having T-shaped gate electrode and...

Details Semiconductor device having T-shaped gate electrode and... Semiconductor device having T-shaped gate electrode and...

2005-12-27

2005-12-27

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000, C257S411000

Reexamination Certificate

active

06979871

ABSTRACT:
A semiconductor device in which a silica aerogel layer having a very low dielectric constant is used as an insulating layer such that parasitic capacitance between a gate electrode and a source electrode in a field effect transistor having a T-shaped gate electrode, and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor substrate, source and drain electrodes, which are formed on the semiconductor substrate to make ohmic contact with the semiconductor substrate, a T-shaped gate electrode, which is formed between the source and drain electrodes on the semiconductor substrate, and an insulating layer including a silica aerogel layer, the silica aerogel layer being interposed between the gate electrode and the source and drain electrodes.

REFERENCES:
patent: 5034608 (1991-07-01), Tavrow et al.
patent: 6329230 (2001-12-01), Matsuda
patent: 6780756 (2004-08-01), Farber et al.
patent: 10-150054 (1998-02-01), None
patent: 1995-0028615 (1995-09-01), None
D. Fanning, L. Witkowski, J. Stidham, H.-Q. Tserng, M. Muir and P. Saunier, Dielectrically defined optical T-gate for high power GaAs pHEMTs, Tri-Quint Semiconductor Texas, GaAs Mantech Conference, Apr. 8-11, 2002, San Diego, California.

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