Semiconductor device having switching element and method for...

Details Semiconductor device having switching element and method for... Semiconductor device having switching element and method for...

2009-12-18

2011-11-15

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S282000

Reexamination Certificate

active

08058693

ABSTRACT:
There is provided a semiconductor device having a switching element, including a first semiconductor layer including a first, second and third surfaces, a first electrode connected to the first semiconductor layer, a plurality of second semiconductor layers selectively configured on the first surface, a third semiconductor layer configured on the second semiconductor layer, a second electrode configured to be contacted with the second semiconductor layer and the third semiconductor layer, a gate electrode formed over the first semiconductor layer, a first region including a first tale region, a density distribution of crystalline defects being gradually increased therein, a peak region crossing a current path applying to a forward direction in a p-n junction, a second tale region continued from the peak region, and a second region including a third tale region, the density distribution of the crystalline defects being gradually increased therein.

REFERENCES:
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patent: 6031276 (2000-02-01), Osawa et al.
patent: 6972459 (2005-12-01), Miura et al.
patent: 64-019771 (1989-01-01), None
patent: 2963204 (1999-08-01), None
patent: 2002-368214 (2002-12-01), None

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