Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Reexamination Certificate
2006-05-23
2006-05-23
Flynn, Nathan J. (Department: 2826)
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
C365S189090, C365S226000
Reexamination Certificate
active
07050339
ABSTRACT:
A memory cell array has memory cells arranged in a matrix form. The memory cell includes a floating gate and a control gate. Word lines are each coupled to the control gates of the memory cells which are arranged on a corresponding one of the rows in the memory cell array. Bit lines are each coupled to drains of the memory cells which are arranged on a corresponding one of the columns in the memory cell array. An external voltage is supplied from the exterior to an external voltage input terminal. A first voltage generating circuit lowers the external voltage to generate a voltage which is to be supplied to the word line coupled to the control gates. A second voltage generating circuit lowers the external voltage to generate a voltage which is to be supplied to the bit line coupled to the drains.
REFERENCES:
patent: 5844847 (1998-12-01), Kobatake
patent: 6198683 (2001-03-01), Ishii et al.
patent: 6373749 (2002-04-01), Atsumi et al.
patent: 62-197997 (1987-09-01), None
patent: 10-79191 (1998-03-01), None
patent: 10-106283 (1998-04-01), None
Georghe Samachisa, et al., “A 128K Flash EEPROM using Double Polysilicon Technology”, ISSCC digest of technical Papers, Session VII: Nonvolatile Memory, Feb. 25, 1982, pp. 76-77.
John F. Dickson, “On-Chip High Voltage Generation in MNOS Integrated Circuits Using an Inmproved Voltage Multiplier Technique”, IEEE Journal Solid-State Circuits, vol. SC-11, No. 3, Jun. 1976, pp. 374-378.
Akira Umezawa, et al., A 5-V-Only Operation 0.6μm Flash EEPROM with Row Decoder Scheme in Triple-Well Structure, IEEE Journal of Solid-State Circuits, vol. 27, No. 11, Nov. 1992, pp. 1540-1546.
Flynn Nathan J.
Kabushiki Kaisha Toshiba
Mandala Jr. Victor A.
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