Semiconductor device having super junction structure

Details Semiconductor device having super junction structure Semiconductor device having super junction structure

2006-12-27

2009-12-15

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S342000, C257SE29027, C257SE29257

Reexamination Certificate

active

07633123

ABSTRACT:
A semiconductor device includes: two main electrodes; multiple first regions; and multiple second regions. The first region having a first impurity concentration and a first width and the second region having a second impurity concentration and a second width are alternately repeated. A product of the first impurity concentration and the first width is equal to a product of the second impurity concentration and the second width. The first width is equal to or smaller than 4.5 μm. The first impurity concentration is lower than a predetermined concentration satisfying a RESURF condition. A ratio between on-state resistances of the device at 27° C. and at 150° C. is smaller than 1.8.

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