Semiconductor device having super junction structure

Details Semiconductor device having super junction structure Semiconductor device having super junction structure

2011-03-29

2011-03-29

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257SE29004

Reexamination Certificate

active

07915671

ABSTRACT:
A semiconductor device includes a silicon substrate having a (110)-oriented surface, a PN column layer disposed on the (110)-oriented surface, a channel-forming layer disposed on the PN column layer, a plurality of source regions disposed at a surface portion of the channel-forming layer, and gate electrodes penetrate through the channel-forming layer. The PN column layer includes first columns having a first conductivity type and second columns having a second conductivity type which are alternately arranged in such a manner that the first columns contact the second columns on (111)-oriented surfaces, respectively. The gate electrodes are adjacent to the source regions, respectively, and each of the gate electrodes has side surfaces that cross the contact surfaces of the first columns and the second columns in a plane of the silicon substrate.

REFERENCES:
patent: 6495294 (2002-12-01), Yamauchi et al.
patent: 6621132 (2003-09-01), Onishi et al.
patent: 7112519 (2006-09-01), Yamaguchi et al.
patent: 2004/0016959 (2004-01-01), Yamaguchi et al.
patent: 2005/0006717 (2005-01-01), Yamaguchi et al.
patent: 2005/0221547 (2005-10-01), Yamauchi et al.
patent: 2006/0138407 (2006-06-01), Yamaguchi et al.
patent: 2006/0256487 (2006-11-01), Kishimoto et al.
patent: 2007/0072398 (2007-03-01), Shibata et al.
patent: A-2000-133801 (2000-05-01), None
patent: A-2000-260984 (2000-09-01), None
patent: 2001-332726 (2001-11-01), None
patent: A-2001-332726 (2001-11-01), None
patent: A-2004-200441 (2004-07-01), None
patent: A-2004-273745 (2004-09-01), None
Notice of Reason for Refusal mailed on Nov. 4, 2009 issued from the Japanese Patent Office in the corresponding Japanese patent application No. 2007-128565 (and English translation).

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