Semiconductor device having super junction

Details Semiconductor device having super junction Semiconductor device having super junction

2008-12-16

2010-12-28

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29262

Reexamination Certificate

active

07859048

ABSTRACT:
A semiconductor device includes: a first semiconductor layer; a PN column layer having first and second column layers; and a second semiconductor layer. Each of the first and second column layers includes first and second columns alternately arranged along with a horizontal direction. The first and second column layers respectively have first and second impurity amount differences defined at a predetermined depth by subtracting an impurity amount in the second column from an impurity amount in the first column. The first impurity amount difference is constant and positive. The second impurity amount difference is constant and negative.

REFERENCES:
patent: 2007/0177444 (2007-08-01), Miyajima
patent: 2008/0017897 (2008-01-01), Saito et al.
patent: A-2004-72068 (2004-03-01), None
Office Action dated Oct. 23, 2009 in the corresponding Chinese patent application No. 2008101856536 (English translation enclosed).

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