Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2006-08-01
2006-08-01
Phan, Trong (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S225700
Reexamination Certificate
active
07085181
ABSTRACT:
A semiconductor device includes a first fuse circuit group and a plurality of second fuse circuit groups. The first fuse circuit group, in which n-bit data is written, is electrically programmable. Each of the plurality of second fuse circuit groups has a first storage unit which is electrically programmable and stores m-bit (m is an integral submultiple of n) rewrite data, and a second storage unit which stores the address of a bit to be written in the first fuse circuit group.
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Kabushiki Kaisha Toshiba
Phan Trong
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