Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2007-03-27
2007-03-27
Tran, Long K. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S506000, C257SE21540, C257SE21545, C438S294000, C438S248000
Reexamination Certificate
active
11268499
ABSTRACT:
The method of manufacturing a semiconductor device has the steps of: etching a semiconductor substrate to form an isolation trench by using as a mask a pattern including a first silicon nitride film and having a window; depositing a second silicon nitride film covering an inner surface of the isolation trench; forming a first silicon oxide film burying the isolation trench; etching and removing the first silicon oxide film in an upper region of the isolation trench; etching and removing the exposed second silicon nitride film; chemical-mechanical-polishing the second silicon oxide film; and etching and removing the exposed first silicon nitride film.
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Office Action dated May 17, 2005 with Translation (JP2002-376009).
English Translation of Japanese Office Action dated Oct. 3, 2006 (mailing date), issued in corresponding Japanese Patent Application No. 2002-376009.
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